(China (Mainland))
Product Summary
The GT15J101 is a silicon N-channel IGBT.
Parametrics
GT15J101 absolute maximum ratings: (1)Collector-emitter voltage: 600 V; (2)Gate-emitter voltage: ± 20 V; (3)Collector current DC: 15 A; (4)Collector current 1 ms: 30 A; (5)Collector power dissipation: 100 W; (6)Junction temperature: 150℃; (7)Storage temperature range: -55℃ to 150℃.
Features
GT15J101 features: (1)High input impedance; (2)High speed: tf = 0.35 μs; (3)Low saturation voltage: VCE(sat) = 4.0 V; (4)Enhancement-mode.
Diagrams
 |
 GT15 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
GT15A |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
GT15J121_1219260 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
GT15J311(Q) |
Toshiba |
IGBT Transistors IGBT, 600V, 15A |
Data Sheet |
Negotiable |
|
||||||||||||
|
GT15J331(TE24L,Q) |
Toshiba |
IGBT Transistors IGBT 600V 15A |
Data Sheet |
Negotiable |
|
||||||||||||
 |
GT15Q102(Q) |
Toshiba |
IGBT Transistors 1200V/15A DIS |
Data Sheet |
|
|
||||||||||||
