(China (Mainland))
Product Summary
The apt50m85jvfr is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology of the apt50m85jvfr minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
Parametrics
apt50m85jvfr absolute maximum ratings: (1) Drain-Source Voltage VDSS: 500V; (2) Continuous Drain Current @ TC=25°C ID: 50A; (3) Pulsed Drain Current IDM: 200A; (4) Gate-Source Voltage Continuous VGS: ±30V; (5) Gate-Source Voltage Transient VGSM: ±40V; (6) Total Power Dissipation @Tc=25°C, PD: 500W; (7) Linear Derating Factor: 4W/°C; (8) Operating and Storage Junction Temperature Range TJ, TSTG: -55 to 150°C; (9) Repetitive Avalanche Energy EAR: 30mJ; (10) Single Pulse Avalanche Energy EAS: 1300mJ.
Features
apt50m85jvfr features: (1) Fast Recovery Body Diode; (2) Lower Leakage; (3) Faster Switching; (4) 100% Avalanche Tested; (5) Popular SOT-227 Package.
Diagrams
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 APT50M85JVFR |
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MOSFET N-CH 500V 50A SOT-227 |
Data Sheet |
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